DC current induced metal-insulator transition in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3}/LaAlO{sub 3} thin film
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)
- CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026 (China)
The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3} (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO{sub 3} substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The T{sub MI} of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 10{sup 9} A•m{sup −2} to 4.9 × 10{sup 9} A•m{sup −2}. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.
- OSTI ID:
- 22252951
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 5 Vol. 4; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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