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Photoconductive metasurface-based ultrafast device

Patent ·
OSTI ID:2222291

A theoretically perfectly absorbing photoconductive all-dielectric metasurface is provided. This metasurface can improve the efficiency and performance of ultrafast photoconductive switches and detectors. In an embodiment, the metasurface is incorporated in photoconductive THz switches or detectors. In embodiments, the metasurface is constituted by a network of gallium arsenide resonators. Each resonator supports two degenerate and critically coupled magnetic dipole modes. Simultaneous excitation of these two modes leads to theoretically close-to-perfect optical absorption near the resonant wavelength.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); UCL Business Ltd., London (Great Britain)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM); UCL Business Ltd. (London, GB)
Patent Number(s):
11,749,694
Application Number:
16/943,001
OSTI ID:
2222291
Country of Publication:
United States
Language:
English

References (22)

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