Terahertz Detection Using Enhanced Two‐Step Absorption in Photoconductive Metasurfaces Gated at λ&nbsp;= 1.55&nbsp;µm

Jung, Hyunseung; Hale, Lucy L.; Briscoe, Jayson; Sarma, Raktim; Luk, Ting Shan; Addamane, Sadhvikas J.; Reno, John L.; Brener, Igal; Mitrofanov, Oleg

doi:10.1002/adom.202201838

Terahertz Detection Using Enhanced Two‐Step Absorption in Photoconductive Metasurfaces Gated at λ = 1.55 µm

Journal Article · Sun Oct 30 00:00:00 EDT 2022 · Advanced Optical Materials

DOI:https://doi.org/10.1002/adom.202201838· OSTI ID:1995849

^[1]; Hale, Lucy L. ^[2]; Briscoe, Jayson ^[1]; Sarma, Raktim ^[1]; Luk, Ting Shan ^[1]; Addamane, Sadhvikas J. ^[1]; Reno, John L. ^[1]; Brener, Igal ^[1]; Mitrofanov, Oleg ^[3]

Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque NM 87123 USA, Sandia National Laboratories Albuquerque NM 87123 USA
University College London Electronic and Electrical Engineering London WC1E 7JE UK
Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque NM 87123 USA, University College London Electronic and Electrical Engineering London WC1E 7JE UK

Abstract

Superior ultrafast photoconductive properties make low temperature grown (LT) GaAs one of the best materials for photoconductive terahertz (THz) detection. However, the large bandgap of LT‐GaAs limits its operation to gating at wavelengths shorter than 870 nm. Here, it is demonstrated for the first time that nanostructuring the LT‐GaAs into a highly absorbing metasurface enables THz photoconductive detection with a pulsed laser at λ = 1.55 µm. The very weak sub‐bandgap absorption mediated by midgap states in LT‐GaAs is strongly enhanced using the concept of perfect absorption via degenerate critical coupling. Integrated with a THz antenna, the LT‐GaAs metasurface enables high sensitivity THz detection with a high dynamic range of 60 dB and large bandwidth up to 4.5 THz. The LT‐GaAs metasurface has the potential to serve as a universal ultrafast switching element for THz applications, enabling low‐cost, turn‐key THz systems for a variety of real‐world applications.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; NA0003525

OSTI ID:: 1995849

Journal Information:: Advanced Optical Materials, Journal Name: Advanced Optical Materials Journal Issue: 1 Vol. 11; ISSN 2195-1071

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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