Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon
- University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece)
- Materials Engineering, The Open University, Milton Keynes MK7 6AA (United Kingdom)
The evolution of self-interstitial clusters in silicon (Si), produced by fast neutron irradiation of silicon crystals followed by anneals up to 750 °C, is investigated using localised vibrational mode spectroscopy. A band at 582 cm{sup −1} appears after irradiation and is stable up to 550 °C was attributed to small self-interstitial clusters (I{sub n}, n ≤ 4), with the most probable candidate the I{sub 4} structure. Two bands at 713 and 758 cm{sup −1} arising in the spectra upon annealing of the 582 cm{sup −1} band and surviving up to ∼750 °C were correlated with larger interstitial clusters (I{sub n}, 5 ≤ n ≤ 8), with the most probable candidate the I{sub 8} structure or/and with chainlike defects which are precursors of the (311) extended defects. The results illustrate the presence of different interstitial clusters I{sub n}, at the various temperature intervals of the material, in the course of an isochronal anneal sequence. As the annealing temperature increases, they evolve from first-order structures with a small number of self-interstitials (I{sub n}, n ≤ 4) for the temperatures 50 < T < 550 °C, to second order structures (I{sub n}, 5 ≤ n ≤ 8) with a larger number of interstitials, for the temperatures 550 < T < 750 °C.
- OSTI ID:
- 22218256
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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