Surface photoconductivity of organosilicate glass dielectrics induced by vacuum-ultraviolet radiation

Journal Article · Wed Aug 14 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4817427· OSTI ID:22218239

Zheng, H.; Nichols, M. T.; Pei, D.; Shohet, J. L. ^[1]; Nishi, Y. ^[2]

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1. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)

The temporary increase in the electrical surface conductivity of low-k organosilicate glass (SiCOH) during exposure to vacuum-ultraviolet radiation (VUV) is investigated. To measure the photoconductivity, patterned “comb structures” are deposited on dielectric films and exposed to synchrotron radiation in the range of 8–25 eV, which is in the energy range of most plasma vacuum-ultraviolet radiation. The change in photo surface conductivity induced by VUV radiation may be beneficial in limiting charging damage of dielectrics by depleting the plasma-deposited charge.

• OSTI ID: 22218239
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITS
DIELECTRIC MATERIALS
EV RANGE
FAR ULTRAVIOLET RADIATION
GLASS
PHOTOCONDUCTIVITY
PLASMA
SILICON COMPOUNDS
SURFACES
SYNCHROTRON RADIATION
THIN FILMS