Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

Journal Article · Tue Sep 03 00:00:00 EDT 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4820991· OSTI ID:22218083

Marwoto, Putut; Made, D. P. Ngurah; Sugianto, ^[1]; Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya ^[2]; Othaman, Zulkafli ^[3]

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1. Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)
2. Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)
3. Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

• OSTI ID: 22218083
• Journal Information: AIP Conference Proceedings, Vol. 1555, Issue 1; Conference: LCTAP 2012: International conference on theoretical and applied physics, Kalimantan (Indonesia), 19-20 Oct 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CADMIUM TELLURIDES
CHEMICAL ANALYSIS
COPPER
DEPOSITION
DOPED MATERIALS
ENERGY GAP
GRAIN SIZE
INFRARED SPECTRA
MORPHOLOGY
NANOSTRUCTURES
OPTICAL PROPERTIES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY