Epitaxial growth of europium monoxide on diamond

Journal Article · Mon Nov 25 04:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4833550· OSTI ID:22217833

Melville, A.; Heeg, T. ^[1]; Mairoser, T.; Schmehl, A. ^[2]; Fischer, M.; Gsell, S.; Schreck, M. ^[3]; Awschalom, D. D. ^[4]; Holländer, B.; Schubert, J. ^[5]; Schlom, D. G. ^[1]

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1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
2. Zentrum für elektronische Korrelationen und Magnetismus, Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)
3. Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)
4. Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637 (United States)
5. Peter Grünberg Institute, PGI9-IT, JARA-FIT, Research Centre Jülich, D-52425 Jülich (Germany)

We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.

• OSTI ID: 22217833
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 103; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIAMONDS
EUROPIUM
EUROPIUM IONS
EUROPIUM OXIDES
FERROMAGNETIC MATERIALS
FILMS
LAYERS
MAGNETIZATION
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
ORIENTATION
SATURATION
SILICON
TRANSITION TEMPERATURE