Epitaxial growth of europium monoxide on diamond
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
- Zentrum für elektronische Korrelationen und Magnetismus, Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)
- Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637 (United States)
- Peter Grünberg Institute, PGI9-IT, JARA-FIT, Research Centre Jülich, D-52425 Jülich (Germany)
We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.
- OSTI ID:
- 22217833
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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