Adsorption-controlled growth of EuO by molecular-beam epitaxy
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States)
- Experimentalphysik VI, Elektronische Korrelationen und Magnetismus, Institut fuer Physik, Universitaet Augsburg, Augsburg D-86135 (Germany)
- Institute of Bio- and Nano-Systems (IBN1-IT), Research Centre Juelich, Juelich D-52425 (Germany)
Using molecular-beam epitaxy, we demonstrate the adsorption-controlled growth of epitaxial EuO films on single crystalline (110) YAlO{sub 3} substrates. Four-circle x-ray diffraction (XRD) reveals phase-pure, epitaxial, (001)-oriented films with rocking curve full width at half maxima as narrow as 34 arc sec (0.0097 deg.). The critical thickness for the onset of relaxation of (001) EuO on (110) YAlO{sub 3} ({approx}2% lattice mismatch) was determined from XRD measurements to be 382{+-}25 A. A saturation magnetization of 6.96{+-}0.07{mu}{sub B}/Eu, a value close to the theoretical limit of 7{mu}{sub B}/Eu, is observed.
- OSTI ID:
- 21175572
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 10; Other Information: DOI: 10.1063/1.2973180; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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