Studies on optical, chemical, and electrical properties of rapid SiO{sub 2} atomic layer deposition using tris(tert-butoxy)silanol and trimethyl-aluminum
- Department of Materials Science and Engineering, Dankook University, Cheonan 330-714 (Korea, Republic of)
- Department of Physics, Dankook University, Cheonan 330-714 (Korea, Republic of)
Rapid SiO{sub 2} atomic layer deposition (ALD) was used to deposit amorphous, transparent, and conformal SiO{sub 2} films using tris(tert-butoxy)silanol (TBS) and trimethyl-aluminum (TMA) as silicon oxide source and catalytic agent, respectively. The growth rate of the SiO{sub 2} films drastically increased to a maximum value (2.3 nm/cycle) at 200 °C and slightly decreased to 1.6 nm/cycle at 275 °C. The SiO{sub 2} thin films have C–H species and hydrogen content (∼8 at%) at 150 °C because the cross-linking rates of SiO{sub 2} polymerization may reduce below 200 °C. There were no significant changes in the ratio of O/Si (∼2.1) according to the growth temperatures. On the other hand, the film density slightly increased from 2.0 to 2.2 although the growth rate slightly decreased after 200 °C. The breakdown strength of SiO{sub 2} also increases from 6.20 ± 0.82 to 7.42 ± 0.81 MV/cm. These values suggest that high cross-linking rate and film density may enhance the electrical property of rapid SiO{sub 2} ALD films at higher growth temperature.
- OSTI ID:
- 22215530
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 10; Conference: IFFM2011: 2011 international forum on functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011, AFM-2: 2. special symposium on advances in functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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