Studies on optical, chemical, and electrical properties of rapid SiO{sub 2} atomic layer deposition using tris(tert-butoxy)silanol and trimethyl-aluminum

Journal Article · Mon Oct 15 04:00:00 EDT 2012 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.04.093· OSTI ID:22215530

Choi, Dongwon ^[1]; Kim, Boo-Kyung; Chung, Kwun-Bum ^[2]; Park, Jin-Seong ^[1]

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1. Department of Materials Science and Engineering, Dankook University, Cheonan 330-714 (Korea, Republic of)
2. Department of Physics, Dankook University, Cheonan 330-714 (Korea, Republic of)

Rapid SiO{sub 2} atomic layer deposition (ALD) was used to deposit amorphous, transparent, and conformal SiO{sub 2} films using tris(tert-butoxy)silanol (TBS) and trimethyl-aluminum (TMA) as silicon oxide source and catalytic agent, respectively. The growth rate of the SiO{sub 2} films drastically increased to a maximum value (2.3 nm/cycle) at 200 °C and slightly decreased to 1.6 nm/cycle at 275 °C. The SiO{sub 2} thin films have C–H species and hydrogen content (∼8 at%) at 150 °C because the cross-linking rates of SiO{sub 2} polymerization may reduce below 200 °C. There were no significant changes in the ratio of O/Si (∼2.1) according to the growth temperatures. On the other hand, the film density slightly increased from 2.0 to 2.2 although the growth rate slightly decreased after 200 °C. The breakdown strength of SiO{sub 2} also increases from 6.20 ± 0.82 to 7.42 ± 0.81 MV/cm. These values suggest that high cross-linking rate and film density may enhance the electrical property of rapid SiO{sub 2} ALD films at higher growth temperature.

• OSTI ID: 22215530
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 10 Vol. 47; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CROSS-LINKING
DEPOSITS
ELECTRICAL PROPERTIES
SILICA
SILICON OXIDES
THIN FILMS