Comparison of boranol and silanol reactivities in boron-doped SiO[sub 2] chemical vapor deposition from trimethyl borate and tetraethyl orthosilicate
Journal Article
·
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
- Sandia National Laboratory, Albuquerque, New Mexico 87185-5800 (United States)
For the first time, the relative rates of consumption of surface boranols and silanols reacting with tetraethyl orthosilicate [TEOS, Si(OCH[sub 2]CH[sub 3])[sub 4]] have been measured. This comparison has direct bearing on understanding the growth of doped SiO[sub 2] films from TEOS and trimethyl borate [TMB, B(OCH[sub 3])[sub 3]] sources since surface boranols and silanols are expected to be present during the thermal chemical vapor deposition process. The measurements were accomplished by first derivatizing a porous silica substrate with boranols and silanols via hydrolysis of the products from an initial trimethyl borate (TMB) chemisorption step. TEOS exposures in the mTorr pressure regime were then carried out in a cold-wall reactor. Reaction products on the surface were identified with Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy in analysis chambers adjoining the reactor. Although TEOS does not react with SiOH at 300 K, it does react with BOH at this temperature. Using the deuterated species (SiOD and BOD) to measure the relative rates of hydroxyl consumption without interference from concurrent hydroxyl formation, the reaction rate constant for boranols with TEOS at 1000 K was determined to be twice that of silanols. At 1000 K, subsequent decomposition of the TEOS chemisorption products regenerates both BOH and SiOH.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7028995
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 12:4; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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Kinetics of TEOS surface reactions on SiO{sub 2} between 765 K and 1200 K studied with FTIR
Conference
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Thu Dec 30 23:00:00 EST 1993
·
OSTI ID:10115830
TEOS reaction rates on SiO{sub 2} at 1000K: Zero-order dependence on hydroxyl coverage and implications for reactions with three-membered siloxane rings
Conference
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Thu Nov 30 23:00:00 EST 1995
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Kinetics of TEOS surface reactions on SiO{sub 2} between 765 K and 1200 K studied with FTIR
Conference
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Thu Dec 30 23:00:00 EST 1993
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OSTI ID:10159881
Related Subjects
36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
ALLOYS
BORON ADDITIONS
BORON ALLOYS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DEUTERIUM COMPOUNDS
DOPED MATERIALS
HYDROGEN COMPOUNDS
MATERIALS
MEDIUM VACUUM
ORGANIC BORON COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
REACTIVITY
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
ALLOYS
BORON ADDITIONS
BORON ALLOYS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DEUTERIUM COMPOUNDS
DOPED MATERIALS
HYDROGEN COMPOUNDS
MATERIALS
MEDIUM VACUUM
ORGANIC BORON COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
REACTIVITY
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K