Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In{sub x}Al{sub 1−x}Sb continuously graded buffer
Journal Article
·
· Materials Research Bulletin
- Division of Future Convergence Technology, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
- School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm{sup 2}/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.
- OSTI ID:
- 22215523
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 10 Vol. 47; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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