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Title: Host-sensitized phosphorescence of Mn{sup 4+}, Pr{sup 3+,4+} and Nd{sup 3+} in MgAl{sub 2}Si{sub 2}O{sub 8}

Journal Article · · Materials Research Bulletin
 [1];  [2]
  1. Department of Materials Science and Engineering, Faculty of Engineering, Karamanoglu Mehmetbey University, Karaman, 70200 (Turkey)
  2. Department of Chemistry, Faculty of Science, Erciyes University, Kayseri 38039 (Turkey)

Highlights: Black-Right-Pointing-Pointer The new red phosphors were synthesized in the MgAl{sub 2}Si{sub 2}O{sub 8} system. Black-Right-Pointing-Pointer These systems were characterized with DTA/TG, XRD, SEM and PL. Black-Right-Pointing-Pointer The excitation and emission mechanisms were explained. -- Abstract: Mn{sup 4+} doped and Pr{sup 3+,4+}, Nd{sup 3+} co-doped MgAl{sub 2}Si{sub 2}O{sub 8}-based phosphors were first of all synthesized about 1300 Degree-Sign C. They were characterized by thermogravimetry (TG), differential thermal analysis (DTA), X-ray powder diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). The luminescence mechanism of the phosphors, which showed broad red emission bands in the range of 610-715 nm and had a different maximum intensity when activated by UV illumination, was discussed. Such a red emission can be attributed to the intrinsic d-d transitions of Mn{sup 4+}.

OSTI ID:
22212507
Journal Information:
Materials Research Bulletin, Vol. 47, Issue 5; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English