Electrochemical behavior of potentiodynamically deposited cobalt oxyhydroxide (CoOOH) thin films for supercapacitor application
- Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India)
Graphical abstract: Scanning electron micrograph (SEM) images of cobalt oxyhydroxide thin film at (a) 2000 Multiplication-Sign and (b) 10,000 Multiplication-Sign magnifications. Highlights: Black-Right-Pointing-Pointer Simple method for the synthesis of CoOOH thin films. Black-Right-Pointing-Pointer Supercapacitor with maximum specific capacitance of 449 F g{sup -1}. Black-Right-Pointing-Pointer High charge/discharge efficiency. -- Abstract: In the present study, we report, for the first time, the synthesis of cobalt oxyhydroxide thin films on inexpensive stainless steel substrate using potentiodynamic electrodeposition method. These films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM) techniques. The orthorhombic crystal structure was revealed by the X-ray diffraction study. The FT-IR spectrum confirmed the formation of cobalt oxyhydroxide. The SEM studies showed the nanoflakes-like morphology with an average thickness of 100 nm. The cyclic voltammetry study of the cobalt oxyhydroxide films in 1 M KOH showed maximum specific capacitance of 449 F g{sup -1} at scan rate of 5 mV s{sup -1}.
- OSTI ID:
- 22212454
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 3; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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