Low temperature synthesis and photoluminescent properties of CaMoO{sub 4}:Eu{sup 3+} red phosphor with uniform micro-assemblies

Journal Article · Thu Sep 15 00:00:00 EDT 2011 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2011.05.029· OSTI ID:22212234

Yu, Fangyi ^[1]; Zuo, Jian ^[1]; Zhao, Zhi ^[1]; Jiang, Chengying ^[2]; Yang, Qing ^[1]

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1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)
2. Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

Highlights: {yields} Synthesis of Eu{sup 3+}-doped CaMoO{sub 4} red phosphor via a facile hydrothermal method. {yields} The morphology of the materials was manipulated using different alkaline sources. {yields} Micro-structures were assembled by small nanostructures. {yields} Luminescent investigations confirmed that the Eu{sup 3+} ions have been effectively doped into the nanostructures. {yields} Schematic diagram for the energy transfer clearly reveals the photoluminescent mechanism. -- Abstract: Scheelite-type Eu{sup 3+}-doped CaMoO{sub 4} red phosphor with uniform micro-assemblies has been successfully synthesized via a facile hydrothermal method at 120 {sup o}C for 10 h. The Eu{sup 3+}-doped CaMoO{sub 4} microstructures were assembled by small nanostructures and the morphology of materials was found to be manipulated by dropping different alkalis into the stock solution for the first time. The structure, morphology, and luminescent property were characterized and investigated by techniques of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL). The luminescent investigations confirmed that the Eu{sup 3+} ions have been effectively doped into CaMoO{sub 4} nanostructures. The successfully achieved Eu{sup 3+}-doped CaMoO{sub 4} nanostructures will be potential in technological applications on near UV chip-based white light emitting diode (WLED).

• OSTI ID: 22212234
• Journal Information: Materials Research Bulletin, Vol. 46, Issue 9; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
DOPED MATERIALS
ENERGY TRANSFER
EUROPIUM IONS
FIELD EMISSION
HYDROTHERMAL SYNTHESIS
LIGHT EMITTING DIODES
MICROSTRUCTURE
MOLYBDATES
NANOSTRUCTURES
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
TEMPERATURE RANGE 0065-0273 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION