Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures
Journal Article
·
· Journal of Experimental and Theoretical Physics
- Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
The longitudinal {rho}{sub xx}(B) and Hall {rho}{sub xy}(B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0-16) T and temperatures T = (0.05-70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction.
- OSTI ID:
- 22210573
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 117, Issue 1; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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