Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells

Journal Article · Sun Feb 15 04:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615020037· OSTI ID:22470077

Arapov, Yu. G.; Klepikova, A. S.; Neverov, V. N.; Shelushinina, N. G.; Yakunin, M. V. ^[1]

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1. Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)

The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in n-InGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electron-electron interaction effects.

• OSTI ID: 22470077
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRIC CONDUCTIVITY
ELECTRON-ELECTRON COUPLING
GALLIUM ARSENIDES
HALL EFFECT
HETEROJUNCTIONS
HYPOTHESIS
ILLUMINANCE
INDIUM ARSENIDES
INFRARED RADIATION
MAGNETIC FIELDS
N-TYPE CONDUCTORS
QUANTUM WELLS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K