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Title: A study on the structural and mechanical properties of nanocrystalline CuS thin films grown by chemical bath deposition technique

Journal Article · · Materials Research Bulletin
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  1. Department of Chemistry, Bengal Engineering and Science University, Shibpur, Botanic Garden, Howrah 711103, West Bengal (India)
  2. School of Materials Science and Engineering, Bengal Engineering and Science University, Shibpur, Botanic Garden, Howrah 711103, West Bengal (India)
  3. Tailored Liquid Integration Research Group, Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 2266-98 Shimo-shidami, Moriyama-ku, Nagoya 463-8560 (Japan)
  4. Department of Materials Science and Centre for Advanced Materials, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

We report a chemical route for the deposition of nanocrystalline thin films of CuS, using aqueous solutions of Cu(CH{sub 3}COO){sub 2}, SC(NH{sub 2}){sub 2} and N(CH{sub 2}CH{sub 2}OH){sub 3} [triethanolamine, i.e. TEA] in proper concentrations and ratios. The films were structurally characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FESEM) and optical analysis [both photo luminescence (PL) and ultraviolet-visible (UV-vis)]. Optical studies showed a large blue shift in the band gap energy of the films due to quantum confinement effect exerted by the nanocrystals. From both XRD and FESEM analyses, formation of CuS nanocrystals with sizes within 10-15 nm was evident. A study on the mechanical properties was carried out using nanoindentation and nanoscratch techniques, which showed good mechanical stability and high adherence of the films with the bottom substrate. Such study on the mechanical properties of the CuS thin films is being reported here for the first time. Current-voltage (I-V) measurements were also carried out for the films, which showed p-type conductivity.

OSTI ID:
22209971
Journal Information:
Materials Research Bulletin, Vol. 46, Issue 1; Other Information: Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English