Spectroscopic ellipsometry investigations of the optical properties of manganese doped bismuth vanadate thin films

Journal Article · Thu Apr 15 04:00:00 EDT 2010 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2009.11.004· OSTI ID:22202578

Kumari, Neelam; Krupanidhi, S. B. ^[1]; Varma, K. B.R., ^[1]

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1. Materials Research Center, Indian Institute of Science, Bangalore 560012 (India)

The optical properties of Bi{sub 2}V{sub 1-x}Mn{sub x}O{sub 5.5-x} {l_brace}x = 0.05, 0.1, 0.15 and 0.2 at.%{r_brace} thin films fabricated by pulsed laser deposition on platinized silicon substrates were studied in UV-visible spectral region (1.51-4.17 eV) using spectroscopic ellipsometry. The optical constants and thicknesses of these films have been obtained by fitting the ellipsometric data ({Psi} and {Delta}) using a multilayer four-phase model system and a relaxed Lorentz oscillator dispersion relation. The surface roughness and film thickness obtained by spectroscopic ellipsometry were found to be consistent with the results obtained by atomic force and scanning electron microscopy. The refractive index measured at 650 nm does not show any marginal increase with Mn content. Further, the extinction coefficient does not show much decrease with increasing Mn content. An increase in optical band gap energy from 2.52 to 2.77 eV with increasing Mn content from x = 0.05 to 0.15 was attributed to the increase in oxygen ion vacancy disorder.

• OSTI ID: 22202578
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 4 Vol. 45; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
DISPERSION RELATIONS
DOPED MATERIALS
ENERGY BEAM DEPOSITION
LASER RADIATION
LASERS
LAYERS
MANGANESE
OXYGEN IONS
PULSED IRRADIATION
REFRACTIVE INDEX
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
THICKNESS
THIN FILMS