Control of growth orientation and shape for epitaxially grown In{sub 2}O{sub 3} nanowires on a-plane sapphire

Journal Article · Mon Feb 15 04:00:00 EST 2010 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2009.08.011· OSTI ID:22202553

Chen, Ching-Jong ^[1]; Chern, Ming-Yau ^[1]; Wu, Chien-Ting ^[2]; Chen, Cheng-Hsuan ^[3]

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1. Department of Physics, National Taiwan University, Taiwan (China)
2. Department of Materials Science and Engineering, National Taiwan University, Taiwan (China)
3. Center for Condensed Matter Sciences, National Taiwan University, Taiwan (China)

Vertically aligned indium oxide nanowires were grown on a-plane sapphire substrate by the method of catalyst-assisted carbothermal reduction. The morphology and crystal structure of the nanowires are determined by X-ray diffraction, transmission electron microscopy and field-emission scanning electron microscopy. Two types of In{sub 2}O{sub 3} nanowires were found by controlling the growth conditions. The nanowires with a hexagonal cross-section were shown to grow in [1 1 1] direction, whereas those with a square cross-section grow in [0 0 1] direction. In addition to the temperature effects, the concept of supersaturation in Au catalyst is proposed to explain the formation of these two types of nanowires. Besides, tapering, which is explained with the interplay between the vapor-liquid-solid and vapor-solid growth mechanisms, is observed in the nanowires.

• OSTI ID: 22202553
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 2 Vol. 45; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CATALYSTS
CROSS SECTIONS
CRYSTAL STRUCTURE
EPITAXY
FIELD EMISSION
INDIUM OXIDES
MORPHOLOGY
QUANTUM WIRES
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SOLIDS
SUPERSATURATION
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
WIRES
X-RAY DIFFRACTION