Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping

Luo, Weijun; Puretzky, Alexander; Lawrie, Benjamin; Tan, Qishuo; Gao, Hongze; Swan, Anna K.; Liang, Liangbo; Ling, Xi

doi:10.1021/acs.nanolett.3c02308

Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping

Journal Article · Wed Oct 25 00:00:00 EDT 2023 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.3c02308· OSTI ID:2217732

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Boston Univ., MA (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Exciton localization through nanoscale strain has been used to create highly efficient single-photon emitters (SPEs) in 2D materials. However, the strong Coulomb interactions between excitons can lead to nonradiative recombination through exciton–exciton annihilation, negatively impacting SPE performance. Here, we investigate the effect of Coulomb interactions on the brightness, single photon purity, and operating temperatures of strain-localized GaSe SPEs by using electrostatic doping. By gating GaSe to the charge neutrality point, the exciton–exciton annihilation nonradiative pathway is suppressed, leading to ∼60% improvement of emission intensity and an enhancement of the single photon purity g⁽²⁾(0) from 0.55 to 0.28. The operating temperature also increased from 4.5 K to 85 K consequently. In conclusion, this research provides insight into many-body interactions in excitons confined by nanoscale strain and lays the groundwork for the optimization of SPEs for optoelectronics and quantum photonics.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; SC0021064

OSTI ID:: 2217732

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 21 Vol. 23; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Fermi level
binding energy
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excitons
gallium selenide
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Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping

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