Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

Luo, Weijun; Puretzky, Alexander A.; Lawrie, Benjamin J.; Tan, Qishuo; Gao, Hongze; Chen, Zhuofa; Sergienko, Alexander V.; Swan, Anna K.; Liang, Liangbo; Ling, Xi

doi:10.1021/acsphotonics.3c00052

Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

Journal Article · Thu Jul 27 00:00:00 EDT 2023 · ACS Photonics

DOI:https://doi.org/10.1021/acsphotonics.3c00052· OSTI ID:1996710

Luo, Weijun ^[1]; ^[2]; ^[3]; ^[1]; Gao, Hongze ^[1]; ^[1]; Sergienko, Alexander V. ^[1]; ^[1]; ^[2]; ^[1]

Boston Univ., MA (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced SPEs in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 K. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC05-00OR22725; SC0021064

OSTI ID:: 1996710

Journal Information:: ACS Photonics, Journal Name: ACS Photonics Journal Issue: 8 Vol. 10; ISSN 2330-4022

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

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