High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Ewing, Jacob J.; Lynsky, Cheyenne; Wong, Matthew S.; Wu, Feng; Chow, Yi Chao; Shapturenka, Pavel; Iza, Michael; Nakamura, Shuji; Denbaars, Steven P.; Speck, James S.

doi:10.1364/OE.503732

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Journal Article · Mon Nov 20 23:00:00 EST 2023 · Optics Express

DOI:https://doi.org/10.1364/OE.503732· OSTI ID:2217385

; Lynsky, Cheyenne; Wong, Matthew S.; Wu, Feng; ; ; Iza, Michael; Nakamura, Shuji; Denbaars, Steven P.; Speck, James S.

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm ² . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

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Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0009691

OSTI ID:: 2217385

Journal Information:: Optics Express, Journal Name: Optics Express Journal Issue: 25 Vol. 31; ISSN 1094-4087; ISSN OPEXFF

Publisher:: Optical Society of AmericaCopyright Statement

Country of Publication:: United States

Language:: English

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