Growth and electrical characterization of Al{sub 0.24}Ga{sub 0.76}As/Al{sub x}Ga{sub 1-x}As/Al{sub 0.24}Ga{sub 0.76}As modulation-doped quantum wells with extremely low x

Journal Article · Mon Jun 24 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4812357· OSTI ID:22163067

Gardner, Geoffrey C. ^[1]; Watson, John D.; Mondal, Sumit ^[1]; Deng, Nianpei; Csathy, Gabor A. ^[2]; Manfra, Michael J. ^[1]

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1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
2. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)

We report on the growth and electrical characterization of modulation-doped Al{sub 0.24}Ga{sub 0.76}As/Al{sub x}Ga{sub 1-x}As/Al{sub 0.24}Ga{sub 0.76}As quantum wells with mole fractions as low as x = 0.00057. Such structures will permit detailed studies of the impact of alloy disorder in the fractional quantum Hall regime. At zero magnetic field, we extract an alloy scattering rate of 24 ns{sup -1} per%Al. Additionally, we find that for x as low as 0.00057 in the quantum well, alloy scattering becomes the dominant mobility-limiting scattering mechanism in ultra-high purity two-dimensional electron gases typically used to study the fragile {nu} = 5/2 and {nu} = 12/5 fractional quantum Hall states.

• OSTI ID: 22163067
• Journal Information: Applied Physics Letters, Vol. 102, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ALLOYS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
CARRIER MOBILITY
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON GAS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
IMPURITIES
MAGNETIC FIELDS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TERNARY ALLOY SYSTEMS
TWO-DIMENSIONAL CALCULATIONS
X-RAY SPECTROSCOPY