Hidden Quantum Hall Stripes in AlxGa1-xAs/Al0.24Ga0.76As Quantum Wells

Fu, X.; Huang, Yi; Shi, Q.; Shklovskii, B.  I.; Zudov, M.  A.; Gardner, G.  C.; Manfra, M.  J.

doi:10.1103/physrevlett.125.236803

Title: Hidden Quantum Hall Stripes in Al x Ga 1 - x As / Al 0.24 Ga 0.76 As Quantum Wells

Journal Article · Wed Dec 02 00:00:00 EST 2020 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.125.236803· OSTI ID:1850824

Fu, X. ^[1];

^[1]; Shi, Q. ^[1]; Shklovskii, B. I. ^[1]; Zudov, M. A. ^[1]; Gardner, G. C. ^[2]; Manfra, M. J. ^[2]

Univ. of Minnesota, Minneapolis, MN (United States)
Purdue Univ., West Lafayette, IN (United States)

We report on transport signatures of hidden quantum Hall stripe (hQHS) phases in high (N>2) half-filled Landau levels of Al_xGa_1-xAs/Al_0.24Ga_0.76As quantum wells with varying Al mole fraction x<10^-3. Residing between the conventional stripe phases (lower N) and the isotropic liquid phases (higher N), where resistivity decreases as 1/N, these hQHS phases exhibit isotropic and N-independent resistivity. Using the experimental phase diagram, we establish that the stripe phases are more robust than theoretically predicted, calling for improved theoretical treatment. We also show that, unlike conventional stripe phases, the hQHS phases do not occur in ultrahigh mobility GaAs quantum wells but are likely to be found in other systems.

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Research Organization:: Univ. of Minnesota, Minneapolis, MN (United States); Purdue Univ., West Lafayette, IN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0002567; SC0006671

OSTI ID:: 1850824

Journal Information:: Physical Review Letters, Vol. 125, Issue 23; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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