Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

Journal Article · Fri Jun 07 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4809644· OSTI ID:22162997

Casallas-Moreno, Y. L.; Perez-Caro, M.; Gallardo-Hernandez, S.; Ramirez-Lopez, M.; Martinez-Velis, I.; Lopez-Lopez, M. ^[1]; Escobosa-Echavarria, A. ^[2]

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1. Physics Department, Centro de Investigacion y de Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 Mexico D.F. (Mexico)
2. Electric Engineering Department, Centro de Investigacion y de Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 Mexico D.F. (Mexico)

InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 Degree-Sign C, and different In beam fluxes (BEP{sub In}) ranging from 5.9 Multiplication-Sign 10{sup -7} to 9.7 Multiplication-Sign 10{sup -7} Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 Degree-Sign C by MEE.

• OSTI ID: 22162997
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 21 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUFFERS
CRYSTALLOGRAPHY
CRYSTALS
ELECTRON DIFFRACTION
GALLIUM ARSENIDES
IMPURITIES
INDIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
NUCLEATION
PLASMA
RESOLUTION
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
X RADIATION
X-RAY DIFFRACTION