Growth of InN by MBE[Molecular Beam Epitaxy]
Conference
·
OSTI ID:20104541
A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.
- Research Organization:
- Purdue Univ., West Lafayette, IN (US)
- Sponsoring Organization:
- Purdue Research Foundation
- OSTI ID:
- 20104541
- Country of Publication:
- United States
- Language:
- English
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