Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100)

Journal Article · Mon Apr 29 04:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4802795· OSTI ID:22162882

Shan, Rong ^[1]; Ouardi, Siham; Fecher, Gerhard H.; ViolBarbosa, Carlos E.; Felser, Claudia ^[2]; Gao, Li; Kellock, Andrew; Roche, Kevin P.; Samant, Mahesh G.; Parkin, Stuart S. P. ^[3]; Ikenaga, Eiji ^[4]

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1. Institut fuer Anorganische und Analytische Chemie, Johannes Gutenberg-Universitaet, 55099 Mainz (Germany)
2. Max Planck Institute for Chemical Physics of Solids, 01187 Dresden (Germany)
3. IBM Almaden Research Center, San Jose, California 95120 (United States)
4. Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Hyogo 679-5198 (Japan)

Thin films of the proposed topological insulator LuPdBi-a Heusler compound with the C1{sub b} structure-were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi{sub 2} and Lu targets. Epitaxial growth of LuPdBi films was confirmed by X-ray diffraction and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, even though the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the LuPdBi films, observed by hard X-ray photoelectron spectroscopy, correspond very well with the ab initio-calculated density of states.

• OSTI ID: 22162882
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 102; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH ALLOYS
BUFFERS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
ENERGY GAP
EPITAXY
HARD X RADIATION
LUTETIUM ALLOYS
MAGNESIUM OXIDES
PALLADIUM ALLOYS
SPUTTERING
STOICHIOMETRY
SUBSTRATES
SURFACES
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTRA