Reduction of 1/f noise in graphene after electron-beam irradiation

Journal Article · Mon Apr 15 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4802759· OSTI ID:22162848

Zahid Hossain, Md. ^[1]; Rumyantsev, Sergey ^[2]; Shur, Michael S. ^[2]; Balandin, Alexander A. ^[1]

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1. Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California-Riverside, Riverside, California 92521 (United States)
2. Center for Integrated Electronics and Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

We investigated experimentally the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S{sub I}/I{sup 2} (I is the source-drain current) by an order-of magnitude at the radiation dose of 10{sup 4} {mu}C/cm{sup 2}. We analyzed the observed noise reduction in the limiting cases of the mobility and carrier number fluctuation mechanisms. The obtained results are important for the proposed graphene applications in analog, mixed-signal, and radio-frequency systems, integrated circuits and sensors.

• OSTI ID: 22162848
• Journal Information: Applied Physics Letters, Vol. 102, Issue 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CRYSTAL DEFECTS
ELECTRON BEAMS
FLUCTUATIONS
GRAPHENE
INTEGRATED CIRCUITS
IRRADIATION
KEV RANGE 10-100
MOBILITY
NOISE
RADIATION DOSES
RADIOWAVE RADIATION
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SENSORS
SPECTRAL DENSITY