Investigation on origin of Z{sub 1/2} center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

Journal Article · Mon Mar 18 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4796141· OSTI ID:22162797

Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu ^[1]; Thang Trinh, Xuan; Tien Son, Nguyen; Janzen, Erik ^[2]

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1. Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510 (Japan)
2. Department of Physics Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden)

The Z{sub 1/2} center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z{sub 1/2} center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z{sub 1/2} defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (V{sub C}) determined by electron paramagnetic resonance, suggesting that the Z{sub 1/2} deep level originates from V{sub C}.

• OSTI ID: 22162797
• Journal Information: Applied Physics Letters, Vol. 102, Issue 11; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CARBON
CARRIER LIFETIME
CARRIERS
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON BEAMS
ELECTRON SPIN RESONANCE
EPITAXY
IRRADIATION
LAYERS
PARAMAGNETISM
RESONANCE
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
VACANCIES