Recovery of the chemical ordering in L1{sub 0} MnAl epitaxial thin films irradiated by 2 MeV protons

Journal Article · Mon Mar 11 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4794804· OSTI ID:22162783

Anuniwat, Nattawut; Cui, Yishen ^[1]; Wolf, Stuart A. ^[1]; Lu, Jiwei ^[2]; Weaver, Bradley D. ^[3]

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1. Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)
2. Department of Material Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
3. Naval Research Laboratory, Washington DC, 20375 (United States)

Epitaxial MnAl films with a high chemical ordering were synthesized and characterized during a series of irradiations by 2 MeV protons (H{sup +}). The chemical ordering was first reduced to a minimum at a total fluence (TF) of 1 Multiplication-Sign 10{sup 15} H{sup +}/cm{sup 2}, and consequently was recovered at the final total fluence of 2 Multiplication-Sign 10{sup 15} H{sup +}/cm{sup 2}. We attributed the recovery of chemical ordering to thermal effects and the enhanced diffusion caused by the high energy protons. In addition, the damages by the protons have little effect on the magnetic scattering processing in MnAl characterized by the anomalous Hall effect.

• OSTI ID: 22162783
• Journal Information: Applied Physics Letters, Vol. 102, Issue 10; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ALLOYS
COERCIVE FORCE
DIFFUSION
EPITAXY
HALL EFFECT
HYDROGEN IONS 1 PLUS
IRRADIATION
LAYERS
MANGANESE ALLOYS
MEV RANGE
PROTONS
SCATTERING
THIN FILMS