Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

Journal Article · Mon Mar 11 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4795793· OSTI ID:22162777

Seetoh, I. P. ^[1]; Soh, C. B. ^[2]; Fitzgerald, E. A. ^[1]; Chua, S. J. ^[1]

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1. Singapore-MIT Alliance, National University of Singapore, Singapore 117576 (Singapore)
2. Institute of Materials Research and Engineering, A-STAR, 3 Research Link, Singapore 117602 (Singapore)

Auger recombination in InN films grown by metal-organic chemical vapor deposition was studied by steady-state photoluminescence at different laser excitation powers and sample temperatures. It was dominant over radiative recombination and Shockley-Read-Hall recombination at low temperatures, contributing to the sub-linear relationship between the integrated photoluminescence intensity and laser excitation power. Auger recombination rates increased gradually with temperature with an activation energy of 10-17 meV, in good agreement with values from transient photoluminescence reported in literature. As the Auger recombination rates were independent of material quality, they may form an upper limit to the luminous efficiency of InN.

• OSTI ID: 22162777
• Journal Information: Applied Physics Letters, Vol. 102, Issue 10; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
AUGER EFFECT
CHEMICAL VAPOR DEPOSITION
EFFICIENCY
ELECTRONS
EXCITATION
HOLES
INDIUM NITRIDES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
RECOMBINATION
SEMICONDUCTOR MATERIALS
STEADY-STATE CONDITIONS
THIN FILMS
TRANSIENTS