Radiative and Auger recombination processes in indium nitride

McAllister, Andrew; Bayerl, Dylan; Kioupakis, Emmanouil

doi:10.1063/1.5038106

Title: Radiative and Auger recombination processes in indium nitride

Journal Article · Mon Jun 18 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5038106· OSTI ID:1543870

^[1]; Bayerl, Dylan ^[1]; Kioupakis, Emmanouil ^[1]

Univ. of Michigan, Ann Arbor, MI (United States)

InN and In-rich InGaN alloys emit in the infrared range desirable for telecommunication applications. However, the droop problem reduces their efficiency at high power. Nonradiative Auger recombination is a strong contributor to this efficiency loss. Here, we investigate radiative and Auger recombination in InN and In-rich InGaN with first-principles calculations. We find that the direct eeh process dominates Auger recombination in these materials. In the degenerate carrier regime, the Auger and radiative rates are suppressed by different mechanisms: the radiative rate is affected by phase-space filling while Auger recombination is primarily reduced by free-carrier screening. The suppression of the radiative rate onsets at lower carrier densities than that of the Auger rate, which reduces the internal quantum efficiency of InN devices. Droop in InN can be mitigated by increasing the bandgap through alloying with GaN. Here, we demonstrate that the peak efficiency of In_0.93Ga_0.07N alloys (which emit at 1550 nm) is 33% higher than that of InN and occurs at higher carrier densities.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1543870

Alternate ID(s):: OSTI ID: 1455105

Journal Information:: Applied Physics Letters, Vol. 112, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements Rashidi, Arman; Monavarian, Morteza; Aragon, Andrew Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-56390-2	journal	December 2019

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