Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Jones, Christina M.; Teng, Chu-Hsiang; Yan, Qimin; Ku, Pei-Cheng; Kioupakis, Emmanouil

doi:10.1063/1.5002104

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Journal Article · Mon Sep 11 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5002104· OSTI ID:1543843

^[1]; Teng, Chu-Hsiang ^[1]; Yan, Qimin ^[2]; ^[1]; Kioupakis, Emmanouil ^[1]

Univ. of Michigan, Ann Arbor, MI (United States)
Temple Univ., Philadelphia, PA (United States)

We investigate the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is overcompensated by the additional transitions enabled by translational symmetry breaking and the resulting lack of momentum conservation. Thus, we find that localization increases both radiative and Auger recombination rates, but that Auger recombination rates increase by one order of magnitude more than radiative rates. Moreover, we demonstrate that localization has an overall detrimental effect on the efficiency-droop and green-gap problems of InGaN light-emitting diodes.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Science Foundation (NSF)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1543843

Alternate ID(s):: OSTI ID: 1389106

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 111; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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