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Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4791673· OSTI ID:22162728
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  1. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)
Tungsten oxide (WO{sub x}) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 Multiplication-Sign 10{sup -4} S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO{sub x}-based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 Multiplication-Sign 10{sup 6}, a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm{sup 2}/V s was realized. Our results demonstrated that WO{sub x}-based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.
OSTI ID:
22162728
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 102; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English