Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method
- Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia)
- Universite des Sciences et Technologies de Lille, Institut d'Electronique de Microelectronique et de Nanotechnologie IEMN, Departement hyperfrequences et Semiconducteurs (France)
Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.
- OSTI ID:
- 22121697
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 47; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress
The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon
Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures
Journal Article
·
Mon Oct 27 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22310682
The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon
Journal Article
·
Thu Jan 11 19:00:00 EST 2018
· Physica Status Solidi B. Basic Solid State Physics
·
OSTI ID:1437066
Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures
Journal Article
·
Mon Jul 21 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22311170