Monolithic pixel detectors in silicon on insulator technology
Journal Article
·
· AIP Conference Proceedings
- Dipartimento di Fisica dell'Universita di Padova and INFN, Sezione di Padova, via Marzolo 8, I-35131 Padova (Italy)
Silicon On Insulator (SOI) is becoming an attractive technology to fabricate monolithic pixel detectors. The possibility of using the depleted resistive substrate as a drift collection volume and to connect it by means of vias through the buried oxide to the pixel electronic makes this kind of approach interesting both for particle and photon detection. In this paper I report the results obtained in the development of monolithic pixel detectors in an SOI technology by a collaboration between groups from the University and INFN of Padova (Italy) and the LBNL and the SCIPP at UCSC (USA).
- OSTI ID:
- 22111936
- Journal Information:
- AIP Conference Proceedings, Vol. 1529, Issue 1; Conference: 35. Brazilian workshop on nuclear physics, Sao Paulo (Brazil), 2-6 Sep 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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