Influence of doping with third group oxides on properties of zinc oxide thin films
- National Institute of Technology Karnataka, Thin Film Laboratory, Physics Department (India)
The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10{sup 3} {Omega}{sup -1} cm{sup -1}. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.
- OSTI ID:
- 22105537
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 47; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Atmospheric pressure chemical vapor deposition of doped zinc oxide thin films and their electrical and optical properties
The conductivity and magnetic properties of zinc oxide thin films doped with cobalt
Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering
Thesis/Dissertation
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:6960505
The conductivity and magnetic properties of zinc oxide thin films doped with cobalt
Journal Article
·
Sun Feb 14 23:00:00 EST 2010
· Semiconductors
·
OSTI ID:21562356
Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering
Journal Article
·
Fri Aug 28 00:00:00 EDT 2015
· AIP Conference Proceedings
·
OSTI ID:22488784