The conductivity and magnetic properties of zinc oxide thin films doped with cobalt

Journal Article · Sun Feb 14 23:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610020053· OSTI ID:21562356

Kulbachinskii, V A; Glebov, D S; Burova, L I ^[1]; Kaul, A R; Reukova, O V ^[2]

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1. Moscow State University, Faculty of Physics (Russian Federation)
2. Moscow State University, Faculty of Chemistry (Russian Federation)

The magnetic properties, temperature dependences of the resistivity, Hall constant, and magnetoresistance of epitaxial zinc oxide films doped with cobalt are studied. The ferromagnetism of the films is observed at room temperature. The conduction and magnetoresistance of the films are attributed to transport of electrons in the conduction band at high temperatures and to hopping transport at low temperatures. With increasing concentration of cobalt dopants, the resistivity of the films increases and the concentration of electrons decreases. This is due to the increase in the ionization energy of donor states because of the increase in the energy of exchange interaction between electrons at donor states and electrons of the d shell of cobaltions.

• OSTI ID: 21562356
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AUGMENTATION
CHALCOGENIDES
COBALT
CRYSTAL GROWTH METHODS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EPITAXY
EXCHANGE INTERACTIONS
FERMIONS
FERROMAGNETISM
FILMS
INTERACTIONS
IONIZATION
LEPTONS
MAGNETIC PROPERTIES
MAGNETISM
MAGNETORESISTANCE
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SHELLS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSITION ELEMENTS
ZINC COMPOUNDS
ZINC OXIDES