Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction

Journal Article · Tue Jan 15 04:00:00 EST 2013 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.4773002· OSTI ID:22105368

Buergi, J.; Molleja, J. Garcia; Feugeas, J. ^[1]; Neuenschwander, R. ^[2]; Kellermann, G. ^[3]; Craievich, A. F. ^[4]

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1. Instituto de Fisica Rosario (CONICET-UNR), Bv. 27 de Febrero 210 bis, S2000EZP Rosario (Argentina)
2. Laboratorio Nacional Luz Sincrotron (LNLS), Caixa Postal 6192, CEP13083-970 Campinas (Brazil)
3. Departamento de Fisica (Universidade Federal do Parana), Caixa Postal 19044, CEP81531-990 Curitiba (Brazil)
4. Instituto de Fisica (Universidade de Sao Paulo), Rua do Matao Travessa R 187, CEP05508-090 Sao Paulo (Brazil)

The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, {theta}-2{theta} scanning, fixed {alpha}-2{theta} scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer.

• OSTI ID: 22105368
• Journal Information: Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 1 Vol. 84; ISSN 0034-6748; ISSN RSINAK
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DEPOSITION
MAGNETRONS
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SMALL ANGLE SCATTERING
SPUTTERING
SYNCHROTRONS
THIN FILMS
X RADIATION
X-RAY DIFFRACTION
X-RAY DIFFRACTOMETERS