Effect of growth temperature on magnetic and electronic properties of epitaxially grown MnAs thin films on GaAs(100) substrates

Journal Article · Tue May 07 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4801508· OSTI ID:22102400

Song, J. H. ^[1]; Cui, Y.; Ketterson, J. B. ^[2]

---

1. Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)
2. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)

We grew epitaxial MnAs thin films on GaAs(100) substrates using molecular-beam epitaxy and investigated the growth temperature dependences of their physical properties. With increasing growth temperature from 200 Degree-Sign C to 350 Degree-Sign C, the crystal orientation of the film changed from type-A to type-B. The Curie temperatures of all type-B samples were {approx}346 K, while the type-A sample showed a lower bulk-like value of {approx}318 K, indicating an improvement in magnetic properties. Samples grown at above 550 Degree-Sign C exhibited semiconducting behavior, whereas the lower temperature grown samples show metallic behavior as expected. Our results indicate that growth temperature plays an important role in determining the crystal structure, magnetic, and electrical-transport properties of MnAs/GaAs(100) thin films.

• OSTI ID: 22102400
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 17 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
CRYSTALS
CURIE POINT
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
LAYERS
MAGNETIC PROPERTIES
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SPIN
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS