Metal-semiconductor transition and magnetic properties of epitaxially grown MnAs/GaAs superlattices

Journal Article · Tue Apr 01 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2832879· OSTI ID:21137295

Song, J H ^[1]; Cui, Y; Lee, J J; Ketterson, J B ^[2]; Cho, S L ^[3]

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1. Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)
2. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)
3. Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

We successfully grew epitaxial MnAs/GaAs superlattices at various growth temperatures (T{sub g}) with a periodicity of 5/5 nm using molecular-beam epitaxy and characterized their magnetic and electrical transport properties. Structural analysis shows that the magnetic anisotropy originates from the crystal domain structure of the MnAs layers. The metallic behavior for the sample with T{sub g}=375 deg. C systematically changed to semiconducting on increasing T{sub g} up to 540 deg. C. The transport properties of thin single layered MnAs films with a thickness of 20 nm showed the same T{sub g} dependency. These observations indicate that the semiconducting characteristics of MnAs/GaAs superlattices are attributable to a radical alteration of the electronic structure of the MnAs layers.

• OSTI ID: 21137295
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
CRYSTAL GROWTH
CRYSTALS
DOMAIN STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
FILMS
GALLIUM ARSENIDES
LAYERS
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
SUPERLATTICES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K