Phase selective growth and characterization of vanadium dioxide films on silicon substrates
- School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan)
- UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585 (Japan)
- GREMAN, UMR 7347 CNRS, Universite Francois Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)
We report on selective growth of VO{sub 2} films with M1, M2, and intermediate T phases on silicon (Si) substrates by using inductively coupled plasma (ICP)-assisted sputtering (ICPS) under particular conditions. The film composed of M2 phase was proved to be under strong in-plane compressive stress, which is consistent with stress-induced M2 phase. Crystalline structural phase transition (SPT) properties of these films were demonstrated together with infrared light transmittance as a measure of insulator-metal transition (IMT) against temperature. Characteristic correlations between SPT and IMT for films with M2 and intermediate-T phases were reported. Ultraviolet photoelectron spectroscopy measurements probed an energy gap of the film in the M2 phase at around 0.4 eV from the Fermi level indicating the presence of a Mott gap.
- OSTI ID:
- 22102365
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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