Highly oriented {delta}-Bi{sub 2}O{sub 3} thin films stable at room temperature synthesized by reactive magnetron sputtering

Journal Article · Mon Jan 28 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4789597· OSTI ID:22102249

Lunca Popa, P.; Kerdsongpanya, S.; Lu, J.; Eklund, P. ^[1]; Sonderby, S. ^[1]; Bonanos, N. ^[2]

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1. Thin Film Division, Department of Physics, Chemistry and Biology, IFM, Linkoeping University, SE-581 83 Linkoeping (Sweden)
2. Department of Energy Conversion and Storage, Technical University of Denmark, Riso Campus, DK-4000 Roskilde (Denmark)

We report the synthesis by reactive magnetron sputtering and structural characterization of highly (111)-oriented thin films of {delta}-Bi{sub 2}O{sub 3}. This phase is obtained at a substrate temperature of 150-200 Degree-Sign C in a narrow window of O{sub 2}/Ar ratio in the sputtering gas (18%-20%). Transmission electron microscopy and x-ray diffraction reveal a polycrystalline columnar structure with (111) texture. The films are stable from room temperature up to 250 Degree-Sign C in vacuum and 350 Degree-Sign C in ambient air.

• OSTI ID: 22102249
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 4; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
MAGNETRONS
POLYCRYSTALS
SUBSTRATES
SURFACES
SYNTHESIS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION