A novel method for effective sodium ion implantation into silicon
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong)
Although sodium ion implantation is useful to the surface modification of biomaterials and nano-electronic materials, it is a challenging to conduct effective sodium implantation by traditional implantation methods due to its high chemical reactivity. In this paper, we present a novel method by coupling a Na dispenser with plasma immersion ion implantation and radio frequency discharge. X-ray photoelectron spectroscopy (XPS) depth profiling reveals that sodium is effectively implanted into a silicon wafer using this apparatus. The Na 1s XPS spectra disclose Na{sub 2}O-SiO{sub 2} bonds and the implantation effects are confirmed by tapping mode atomic force microscopy. Our setup provides a feasible way to conduct sodium ion implantation effectively.
- OSTI ID:
- 22093676
- Journal Information:
- Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 7 Vol. 83; ISSN 0034-6748; ISSN RSINAK
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
COUPLING
HIGH-FREQUENCY DISCHARGES
ION IMPLANTATION
MODIFICATIONS
PLASMA
RADIOWAVE RADIATION
REACTIVITY
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SODIUM OXIDES
SPECTRA
SURFACES
X-RAY PHOTOELECTRON SPECTROSCOPY