Epitaxial relationship of semipolar s-plane (1101) InN grown on r-plane sapphire

Journal Article · Mon Jul 02 04:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4731788· OSTI ID:22092041

Dimitrakopulos, G. P. ^[1]

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1. Department of Physics, Aristotle University of Thessaloniki, GR 541 26 Thessaloniki (Greece)

The heteroepitaxy of semipolar s-plane (1101) InN grown directly on r-plane sapphire by plasma-assisted molecular beam epitaxy is studied using transmission electron microscopy techniques. The epitaxial relationship is determined to be (1101){sub InN} Parallel-To (1102){sub Al{sub 2O{sub 3}}}, [1120]{sub InN} Parallel-To [2021]{sub Al{sub 2O{sub 3}}}, [1102]{sub InN}{approx} Parallel-To [0221]{sub Al{sub 2O{sub 3}}}, which ensures a 0.7% misfit along [1120]{sub InN}. Two orientation variants are identified. Proposed geometrical factors contributing to the high density of basal stacking faults, partial dislocations, and sphalerite cubic pockets include the misfit accommodation and reduction, as well as the accommodation of lattice twist.

• OSTI ID: 22092041
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 101; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DENSITY
DEPOSITION
DISLOCATIONS
HETEROJUNCTIONS
INDIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
PLASMA
SAPPHIRE
SEMICONDUCTOR MATERIALS
STACKING FAULTS
SULFIDE MINERALS
TRANSMISSION ELECTRON MICROSCOPY