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Title: Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond

Abstract

High-k oxide insulators (Al{sub 2}O{sub 3} and HfO{sub 2}) have been deposited on a single crystalline hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at temperature as low as 120 Degree-Sign C. Interfacial electronic band structures are characterized by X-ray photoelectron spectroscopy. Based on core-level binding energies and valence band maximum values, valence band offsets are found to be 2.9 {+-} 0.2 and 2.6 {+-} 0.2 eV for Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions, respectively. Band gaps of the Al{sub 2}O{sub 3} and HfO{sub 2} have been determined to be 7.2 {+-} 0.2 and 5.4 {+-} 0.2 eV by measuring O 1s energy loss spectra, respectively. Both the Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions are concluded to be type-II staggered band configurations with conduction band offsets of 1.2 {+-} 0.2 and 2.7 {+-} 0.2 eV, respectively.

Authors:
; ;  [1];  [1];  [2];  [2]
  1. Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22089630
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 101; Journal Issue: 25; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BINDING ENERGY; DEPOSITION; DIAMONDS; ENERGY-LOSS SPECTROSCOPY; HAFNIUM OXIDES; HETEROJUNCTIONS; INTERFACES; LAYERS; MONOCRYSTALS; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Liu, J. W., Liao, M. Y., Imura, M., Koide, Y., Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, and Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044. Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond. United States: N. p., 2012. Web. doi:10.1063/1.4772985.
Liu, J. W., Liao, M. Y., Imura, M., Koide, Y., Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, & Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044. Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond. United States. doi:10.1063/1.4772985.
Liu, J. W., Liao, M. Y., Imura, M., Koide, Y., Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, and Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044. Mon . "Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond". United States. doi:10.1063/1.4772985.
@article{osti_22089630,
title = {Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond},
author = {Liu, J. W. and Liao, M. Y. and Imura, M. and Koide, Y. and Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 and Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044},
abstractNote = {High-k oxide insulators (Al{sub 2}O{sub 3} and HfO{sub 2}) have been deposited on a single crystalline hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at temperature as low as 120 Degree-Sign C. Interfacial electronic band structures are characterized by X-ray photoelectron spectroscopy. Based on core-level binding energies and valence band maximum values, valence band offsets are found to be 2.9 {+-} 0.2 and 2.6 {+-} 0.2 eV for Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions, respectively. Band gaps of the Al{sub 2}O{sub 3} and HfO{sub 2} have been determined to be 7.2 {+-} 0.2 and 5.4 {+-} 0.2 eV by measuring O 1s energy loss spectra, respectively. Both the Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions are concluded to be type-II staggered band configurations with conduction band offsets of 1.2 {+-} 0.2 and 2.7 {+-} 0.2 eV, respectively.},
doi = {10.1063/1.4772985},
journal = {Applied Physics Letters},
number = 25,
volume = 101,
place = {United States},
year = {Mon Dec 17 00:00:00 EST 2012},
month = {Mon Dec 17 00:00:00 EST 2012}
}