The effects of vacuum ultraviolet radiation on low-k dielectric films

Journal Article · Sat Dec 01 00:00:00 EST 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4751317· OSTI ID:22089597

Sinha, H.; Ren, H.; Nichols, M. T.; Lauer, J. L.; Shohet, J. L. ^[1]; Tomoyasu, M.; Russell, N. M. ^[2]; Jiang, G.; Antonelli, G. A. ^[3]; Fuller, N. C.; Engelmann, S. U.; Lin, Q. ^[4]; Ryan, V. ^[5]; Nishi, Y. ^[6]

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1. University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Tokyo Electron Limited, Albany, New York 12203 (United States)
3. Novellus Systems, Tualatin, Oregon 97062 (United States)
4. IBM Watson Research Center, Yorktown Heights, New York 10598 (United States)
5. GLOBALFOUNDRIES, Albany, New York 12203 (United States)
6. Stanford University, Stanford, California 94305 (United States)

Plasmas, known to emit high levels of vacuum ultraviolet (VUV) radiation, are used in the semiconductor industry for processing of low-k organosilicate glass (SiCOH) dielectric device structures. VUV irradiation induces photoconduction, photoemission, and photoinjection. These effects generate trapped charges within the dielectric film, which can degrade electrical properties of the dielectric. The amount of charge accumulation in low-k dielectrics depends on factors that affect photoconduction, photoemission, and photoinjection. Changes in the photo and intrinsic conductivities of SiCOH are also ascribed to the changes in the numbers of charged traps generated during VUV irradiation. The dielectric-substrate interface controls charge trapping by affecting photoinjection of charged carriers into the dielectric from the substrate. The number of trapped charges increases with increasing porosity of SiCOH because of charge trapping sites in the nanopores. Modifications to these three parameters, i.e., (1) VUV induced charge generation, (2) dielectric-substrate interface, and (3) porosity of dielectrics, can be used to reduce trapped-charge accumulation during processing of low-{kappa} SiCOH dielectrics. Photons from the plasma are responsible for trapped-charge accumulation within the dielectric, while ions stick primarily to the surface of the dielectrics. In addition, as the dielectric constant was decreased by adding porosity, the defect concentrations increased.

• OSTI ID: 22089597
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 11; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIELECTRIC MATERIALS
FAR ULTRAVIOLET RADIATION
GLASS
INTERFACES
IRRADIATION
ORGANIC COMPOUNDS
PERMITTIVITY
PHOTOCONDUCTIVITY
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
SUBSTRATES
SURFACES
THIN FILMS