Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics

Journal Article · Sun Jan 31 23:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3306729· OSTI ID:21347263

Sinha, H; Lauer, J L; Nichols, M T; Shohet, J L ^[1]; Antonelli, G A ^[2]; Nishi, Y ^[3]

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1. Department of Electrical and Computer Engineering and Plasma Processing and Technology Laboratory, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Novellus Systems, Tualatin, Oregon 97062 (United States)
3. Stanford University, Stanford, California 94305 (United States)

High frequency capacitance-voltage (C-V) measurements are used to determine the effects of vacuum ultraviolet (VUV) and ultraviolet (UV) irradiation on defect states in porous low-k organosilicate (SiCOH) dielectrics. The characteristics show that VUV photons depopulate trapped electrons from defect states within the dielectric creating trapped positive charge. This is evidenced by a negative shift in the flat-band voltage of the C-V characteristic. UV irradiation reverses this effect by repopulating the defect states with electrons photoinjected from the silicon substrate. Thus, UV reduces the number of trapped positive charges in the dielectric and can effectively repair processing-induced damage.

• OSTI ID: 21347263
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BOSONS
CAPACITANCE
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FAR ULTRAVIOLET RADIATION
FERMIONS
FILMS
LEPTONS
MASSLESS PARTICLES
MATERIALS
ORGANIC COMPOUNDS
PHOTONS
PHYSICAL PROPERTIES
POROUS MATERIALS
RADIATIONS
SEMIMETALS
SILICON
SUBSTRATES
THIN FILMS
TRAPPED ELECTRONS
TRAPPING
ULTRAVIOLET RADIATION