Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film
- Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)
- Centre of Excellence in Material Sciences and Nanomaterials, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh, U.P. 202001 (India)
- Department of Electronic Science, Maharaja Agrasen College, University of Delhi, New Delhi 110096 (India)
- Department of Electronic Science, University of Delhi South Campus, New Delhi 110023 (India)
This paper report on the disorder induced semiconductor to metal transition (SMT) and modifications of grain boundaries in nanocrystalline zinc oxide thin film. Disorder is induced using energetic ion irradiation. It eliminates the possibility of impurities induced transition. However, it is revealed that some critical concentration of defects is needed for inducing such kind of SMT at certain critical temperature. Above room temperature, the current-voltage characteristics in reverse bias attributes some interesting phenomenon, such as electric field induced charge transfer, charge trapping, and diffusion of defects. The transition is explained by the defects induced disorder and strain in ZnO crystallites created by high density of electronic excitations.
- OSTI ID:
- 22089466
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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