Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN

Journal Article · Wed Aug 15 04:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4747917· OSTI ID:22089412

Ullah, M. W.; Kuronen, A.; Nordlund, K.; Djurabekova, F. ^[1]; Karaseov, P. A.; Titov, A. I. ^[2]

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1. Department of Physics, University of Helsinki, P.O. Box 64, FIN-00014 Helsinki (Finland)
2. St. Petersburg State Polytechnic University, 195251 St. Petersburg (Russian Federation)

We have studied defect production during single atomic and molecular ion irradiation having an energy of 50 eV/amu in GaN by molecular dynamics simulations. Enhanced defect recombination is found in GaN, in accordance with experimental data. Instantaneous damage shows non-linearity with different molecular projectile and increasing molecular mass. Number of instantaneous defects produced by the PF{sub 4} molecule close to target surface is four times higher than that for PF{sub 2} molecule and three times higher than that calculated as a sum of the damage produced by one P and four F ion irradiation (P+4 Multiplication-Sign F). We explain this non-linearity by energy spike due to molecular effects. On the contrary, final damage created by PF{sub 4} and PF{sub 2} shows a linear pattern when the sample cools down. Total numbers of defects produced by Ag and PF{sub 4} having similar atomic masses are comparable. However, defect-depth distributions produced by these species are quite different, also indicating molecular effect.

• OSTI ID: 22089412
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 112; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC BEAMS
CRYSTAL DEFECTS
FLUORINE IONS
GALLIUM NITRIDES
ION BEAMS
IRRADIATION
MASS
MASS NUMBER
MOLECULAR BEAMS
MOLECULAR DYNAMICS METHOD
MOLECULAR IONS
MOLECULAR WEIGHT
RECOMBINATION
SEMICONDUCTOR MATERIALS
SIMULATION
SPATIAL DISTRIBUTION
SURFACES